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RFD16N05LSM
Data Sheet
N-Channel Logic Level Power MOSFET
50V, 16A, 47 m?
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, switching regulators,
switching converters, motor relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
September 20 13
Features
? 16A, 50V
? r DS(ON) = 0.047 ?
? UIS SOA Rating Curve (Single Pulse)
? Design Optimized for 5V Gate Drives
? Can be Driven Directly from CMOS, NMOS, TTL Circuits
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Majority Carrier Device
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
PART NUMBER
PACKAGE
BRAND
RFD16N05LSM9A
TO-25 2 AA
RFD16N05L SM
Symbol
D
G
S
Packaging
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
?2003 Fairchild Semiconductor Corporation
RFD16N05LSM Rev. C 1
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相关代理商/技术参数
RFD16N05LSM 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK
RFD16N05LSM_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD16N05LSM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD16N05LSM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD16N05NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N05SM 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFD16N05SM_NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N05SM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube